English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™, PolarHT™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 36A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 105mOhm @ 32A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 8mA |
| 栅极电荷 (qg) (max) @ vgs: | 200 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 12000 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 320W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | ISOPLUS247™ |
| 包/箱: | ISOPLUS247™ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PHT6NQ10T,135Nexperia |
MOSFET N-CH 100V 3A SOT223 |
|
IPB60R160C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 23.8A D2PAK |
|
2SJ649-AZRenesas Electronics America |
MOSFET P-CH 60V 20A TO220 |
|
IRFU9020PBFVishay / Siliconix |
MOSFET P-CH 50V 9.9A TO251AA |
|
FDL100N50FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 100A TO264-3 |
|
FKP202Sanken Electric Co., Ltd. |
MOSFET N-CH 200V 45A TO220 |
|
R6020FNJTLROHM Semiconductor |
MOSFET N-CH 600V 20A LPT |
|
SI8465DB-T2-E1Vishay / Siliconix |
MOSFET P-CH 20V 4MICROFOOT |
|
2SK3294-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFIBC40GVishay / Siliconix |
MOSFET N-CH 600V 3.5A TO220-3 |
|
FDMS86163PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 7.9A/50A 8PQFN |
|
2SK3432-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
EPC2021EPC |
GANFET N-CH 80V 90A DIE |
