BATT LITH ION POLY 3.7V 400MAH
MOSFET N-CH 600V 11A PWRFLAT HV
类型 | 描述 |
---|---|
系列: | MDmesh™ DM2 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 11A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 320mOhm @ 5.5A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 21 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | 90W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerFlat™ (8x8) HV |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
APL602B2GRoving Networks / Microchip Technology |
MOSFET N-CH 600V 49A T-MAX |
|
FDMC86259PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 3.2A/13A PWR33 |
|
IPB04N03LAIR (Infineon Technologies) |
MOSFET N-CH 25V 80A TO263-3 |
|
FDMS8660ASRochester Electronics |
MOSFET N-CH 30V 28A/49A 8PQFN |
|
RS3E095BNGZETBROHM Semiconductor |
MOSFET N-CHANNEL 30V 9.5A 8SOP |
|
STP45N60DM2AGSTMicroelectronics |
MOSFET N-CH 600V 34A TO220 |
|
DMN4030LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 9.4A TO252-3 |
|
MCAC10H045Y-TPMicro Commercial Components (MCC) |
N-CHANNEL MOSFET, DFN5060 PACKAG |
|
DMT6017LFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 65V 8.1A 6UDFN |
|
DMN4008LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 14.4A PWRDI3333 |
|
IXTA180N10T-TRLWickmann / Littelfuse |
MOSFET N-CH 100V 180A TO263 |
|
FDMS8570SRochester Electronics |
28A, 25V, 0.0028OHM, N-CHANNEL, |
|
NVMFS5A140PLZT3GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 20A/140A 5DFN |