类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR) |
零件状态: | Not For New Designs |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 4.7mOhm @ 80A, 10V |
vgs(th) (最大值) @ id: | 4V @ 253µA |
栅极电荷 (qg) (max) @ vgs: | 130 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 10300 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 137W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TO263-3-2 |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RJK60S7DPK-M0#T0Rochester Electronics |
MOSFET N-CH 600V 30A TO3PSG |
|
DMN10H170SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 12A TO252-3 |
|
2SK3064G0LPanasonic |
MOSFET N-CH 30V 100MA SMINI3-F2 |
|
RSR020P05HZGTLROHM Semiconductor |
MOSFET P-CH 45V 2A TSMT3 |
|
NTMFS4C53NT1GRochester Electronics |
MOSFET N-CH 30V 38A 5DFN |
|
IRFSL7540PBFRochester Electronics |
MOSFET N-CH 60V 110A TO262 |
|
IPB45N06S409ATMA2Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
NDH832PRochester Electronics |
MOSFET P-CH 20V 4.2A SUPERSOT8 |
|
IXTQ18N60PWickmann / Littelfuse |
MOSFET N-CH 600V 18A TO3P |
|
IRF530ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 14A TO220-3 |
|
SIHP22N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 19A TO220AB |
|
AOTF25S65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 25A TO220-3F |
|
STLD200N4F6AGSTMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT |