English
简体中文
TVS DIODE
MOSFET N-CH 55V 110A TO220
ACCELEROMETER 2-8G ANALOG 12QFN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DeepGATE™, STripFET™ VI |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 110A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5.2mOhm @ 60A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 120 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 8350 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 150W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PMN55ENEHNexperia |
MOSFET N-CH 60V 4.5A 6TSOP |
|
FDP050AN06A0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 18A/80A TO220-3 |
|
FDD26AN06A0Rochester Electronics |
MOSFET N-CH 60V 7A/36A TO252AA |
|
TPN6R003NL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 27A 8TSON-ADV |
|
DMN10H700S-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 700MA SOT23 |
|
MTW8N50ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPI08N80C3XKSA1Rochester Electronics |
MOSFET N-CH 800V 8A TO262-3-1 |
|
RS1E240GNTBROHM Semiconductor |
MOSFET N-CH 30V 24A 8HSOP |
|
FDS8876Rochester Electronics |
MOSFET N-CH 30V 12.5A 8SOIC |
|
IXFP130N15X3Wickmann / Littelfuse |
MOSFET N-CH 150V 130A TO220AB |
|
STD5NK50ZT4STMicroelectronics |
MOSFET N-CH 500V 4.4A DPAK |
|
FDS6990SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
CMS06N10V8-HFComchip Technology |
MOSFET N-CH 100V 6.8A 8PDFN |