English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, UltraFET™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 56A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 25mOhm @ 56A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 130 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 200W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CMS45P03H8-HFComchip Technology |
MOSFET P-CH 30V 9.6A/45A DFN5X6 |
|
FDMS7670Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 21A/42A 8PQFN |
|
IRF830APBF-BE3Vishay / Siliconix |
MOSFET N-CH 500V 5A TO220AB |
|
BSR606NH6327XTSA1Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
IRF253Rochester Electronics |
MOSFET N-CH 150V 25A TO204AE |
|
IRLZ44ZPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 51A TO220AB |
|
BSC886N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 13A/65A TDSON |
|
STF17NF25STMicroelectronics |
MOSFET N-CH 250V 17A TO220FP |
|
RJK0395DPA-00#J53Rochester Electronics |
MOSFET N-CH 30V 30A 8WPAK |
|
DMN24H3D5L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 240V 480MA SOT23 |
|
PSMN004-60B,118Nexperia |
MOSFET N-CH 60V 75A D2PAK |
|
DMTH3004LK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 21A/75A TO252-4L |
|
BUK7E13-60E,127Rochester Electronics |
MOSFET N-CH 60V 58A I2PAK |
