English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 56A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 11.2mOhm @ 35A, 10V |
| vgs(th) (最大值) @ id: | 3.7V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 89 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3107 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 99W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-PAK (TO-252AA) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIRA84BDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 22A/70A PPAK SO8 |
|
AUIRFR8403IR (Infineon Technologies) |
MOSFET N-CH 40V 100A DPAK |
|
IRF6218PBFRochester Electronics |
AUTOMOTIVE HEXFET P-CHANNEL |
|
XP232N0301TR-GTorex Semiconductor Ltd. |
MOSFET N-CH 30V 300MA SOT23 |
|
PSMN7R0-100PS,127Nexperia |
MOSFET N-CH 100V 100A TO220AB |
|
STP5NK65ZFPSTMicroelectronics |
MOSFET N-CH 650V 4.5A TO220FP |
|
DMN10H220LVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 1.87A TSOT26 |
|
FDB075N15A-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 110A D2PAK |
|
BUK9M9R1-40EXNexperia |
MOSFET N-CH 40V 64A LFPAK33 |
|
STP3NK60ZFPSTMicroelectronics |
MOSFET N-CH 600V 2.4A TO220FP |
|
IPD60R280PFD7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 12A TO252-3 |
|
SIJ482DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
|
NTB22N06T4Rochester Electronics |
MOSFET N-CH 60V 22A D2PAK |
