English
简体中文
RES 109K OHM 0.05% 1/4W 1206
CRYSTAL 12.0000MHZ 18PF SMD
MOSFET N-CH 100V 47A TO220-3
TRANSDCR VOTAGE DC 0-0.05VDC IN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SIPMOS® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 47A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 26mOhm @ 33A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 2mA |
| 栅极电荷 (qg) (max) @ vgs: | 135 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2.5 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 175W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-3-1 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK7M4R3-40HXNexperia |
MOSFET N-CH 40V 95A LFPAK33 |
|
BSC016N03MSGRochester Electronics |
BSC016N03 - 12V-300V N-CHANNEL P |
|
NTMS4700NR2Rochester Electronics |
MOSFET N-CH 30V 8.6A 8SOIC |
|
2SK583Rochester Electronics |
N-CHANNEL SMALL SIGNAL MOSFET |
|
IPW60R280P6FKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13.8A TO247-3 |
|
IPD65R190C7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 13A TO252-3 |
|
BUK9107-55ATE,118Rochester Electronics |
NOW NEXPERIA BUK9107-55ATE - |
|
DMP1055USW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 3.8A SOT363 |
|
STI40N65M2STMicroelectronics |
MOSFET N-CH 650V 32A I2PAK |
|
SI2306-TPMicro Commercial Components (MCC) |
MOSFET N-CH 30V 3.16A SOT23 |
|
IPP80N03S4L04AKSA1Rochester Electronics |
MOSFET N-CH 30V 80A TO220-3 |
|
BSS127H6327XTSA2IR (Infineon Technologies) |
MOSFET N-CH 600V 21MA SOT23-3 |
|
NTMFS4C55NT1GRochester Electronics |
MOSFET N-CH 30V 78A SO8FL |