类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFR3709ZTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 86A DPAK |
|
RM5N800HDRectron USA |
MOSFET N-CHANNEL 800V 5A TO263-2 |
|
NP90N055VDG-E1-AYRochester Electronics |
MOSFET N-CH 55V 90A TO252 |
|
CSD16411Q3Texas Instruments |
MOSFET N-CH 25V 14A/56A 8VSON |
|
SQJ868EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 58A PPAK SO-8 |
|
AUIRF9Z34NRochester Electronics |
AUTOMOTIVE HEXFET P CHANNEL |
|
IPD110N12N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 120V 75A TO252-3 |
|
RQ3E080GNTBROHM Semiconductor |
MOSFET N-CH 30V 8A 8HSMT |
|
NTTFS4985NFTAGRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
FDMC2674Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 220V 1A/7A 8MLP |
|
IPN95R1K2P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 6A SOT223 |
|
IXTH12N100LWickmann / Littelfuse |
MOSFET N-CH 1000V 12A TO247 |
|
2SK2499-AZRochester Electronics |
N-CHANNEL POWER MOSFET |