English
简体中文
DC/DC CONVERTER 12V 150W
MOSFET N-CH 600V 38.8A TO3P
IDC CABLE - CKC14G/AE14M/X
SL POSITIVE LOCK P-S 5CKT 100MM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DTMOSIV |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 38.8A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 65mOhm @ 19.4A, 10V |
| vgs(th) (最大值) @ id: | 3.7V @ 1.9mA |
| 栅极电荷 (qg) (max) @ vgs: | 110 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 4100 pF @ 300 V |
| 场效应管特征: | Super Junction |
| 功耗（最大值）: | 270W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-3P(N) |
| 包/箱: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK9Y65-100E,115Nexperia |
MOSFET N-CH 100V 19A LFPAK56 |
|
NTP90N02Rochester Electronics |
MOSFET N-CH 24V 90A TO220AB |
|
TK16A60W,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 15.8A TO220 |
|
FQA13N80Rochester Electronics |
MOSFET N-CH 800V 12.6A TO3PN |
|
CMLDM8120 TRCentral Semiconductor |
MOSFET P-CH 20V 860MA SOT563 |
|
SIHA21N60EF-E3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO220 |
|
IRFR18N15DPBF-INFRochester Electronics |
HEXFET SMPS POWER MOSFET |
|
NTD40N03R-1GRochester Electronics |
MOSFET N-CH 25V 7.8A/32A IPAK |
|
SI4401BDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 8.7A 8SO |
|
SIHH27N60EF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 29A PPAK 8 X 8 |
|
IPP60R074C6XKSA1Rochester Electronics |
MOSFET N-CH 600V 57.7A TO220-3 |
|
T2N7002BK,LMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 400MA SOT23-3 |
|
FQA90N15-F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 90A TO3PN |