English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 25mOhm @ 4A, 4.5V |
| vgs(th) (最大值) @ id: | 800mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 7.7 nC @ 4.5 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 535 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.56W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXFN40N90PWickmann / Littelfuse |
MOSFET N-CH 900V 33A SOT227B |
|
FCH040N65S3-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 65A TO247-3 |
|
IPA028N08N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 89A TO220-FP |
|
IRLR120PBFVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
RM1002Rectron USA |
MOSFET N-CHANNEL 100V 2A SOT23 |
|
PMV16XNRNexperia |
MOSFET N-CH 20V 6.8A TO236AB |
|
IRF8734TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 21A 8SO |
|
SQS462EN-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 8A PPAK1212-8 |
|
STB45N50DM2AGSTMicroelectronics |
MOSFET N-CH 500V 35A D2PAK |
|
STD2N105K5STMicroelectronics |
MOSFET N-CH 1050V 1.5A DPAK |
|
IPB65R420CFDATMA1Rochester Electronics |
MOSFET N-CH 650V 8.7A D2PAK |
|
DMN4060SVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 45V 4.8A TSOT26 |
|
HUFA75309D3SRochester Electronics |
MOSFET N-CH 55V 19A TO252AA |
