English
简体中文
MOSFET N-CH 500V 8A TO263AB
SCR 400V 2700A B-PUK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 850mOhm @ 4.8A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 39 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1100 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.1W (Ta), 125W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263AB |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDFS6N548Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7A 8SOIC |
|
SIHA5N80AE-GE3Vishay / Siliconix |
E SERIES POWER MOSFET THIN-LEAD |
|
IPB80N06S405ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO263-3 |
|
SIHP11N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 8A TO220AB |
|
IRF3710STRRPBFRochester Electronics |
PFET, 57A I(D), 100V, 0.023OHM, |
|
UPA2780GR-E1-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFA130N10T2Wickmann / Littelfuse |
MOSFET N-CH 100V 130A TO263 |
|
APT66M60LRoving Networks / Microchip Technology |
MOSFET N-CH 600V 70A TO264 |
|
FQB27N25TMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPD04N80C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4A TO252-3 |
|
IPB029N06N3GE8187ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 120A D2PAK |
|
NTTFS4928NTWGRochester Electronics |
MOSFET N-CH 30V 7.3A/37A 8WDFN |
|
SQJQ100EL-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 200A PPAK 8 X 8 |