类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, CoolMOS™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 31.2A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 110mOhm @ 12.7A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 1.3mA |
栅极电荷 (qg) (max) @ vgs: | 118 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3240 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 277.8W (Tc) |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO247-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SSM3J375F,LXHFToshiba Electronic Devices and Storage Corporation |
AECQ MOSFET PCH -20V -2A SOT346 |
|
NTD4860N-1GRochester Electronics |
MOSFET N-CH 25V 10.4A/65A IPAK |
|
SSM3J371R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 4A SOT23F |
|
IRF60DM206IR (Infineon Technologies) |
MOSFET N-CH 60V 130A DIRECTFET |
|
SI9934DYRochester Electronics |
P-CHANNEL POWER MOSFET |
|
BUK7Y53-100B,115Nexperia |
MOSFET N-CH 100V 24.8A LFPAK56 |
|
PSMN5R0-30YL,115Nexperia |
MOSFET N-CH 30V 91A LFPAK56 |
|
IRF7769L2TRPBFRochester Electronics |
IRF7769 - 12V-300V N-CHANNEL POW |
|
IPB64N25S320ATMA1IR (Infineon Technologies) |
MOSFET N-CH 250V 64A TO263-3 |
|
PMN55ENEXNexperia |
MOSFET N-CH 60V 4.5A 6TSOP |
|
SUM90220E-GE3Vishay / Siliconix |
MOSFET N-CH 200V 64A D2PAK |
|
FQA6N90Rochester Electronics |
MOSFET N-CH 900V 6.4A TO3P |
|
BUK7M67-60EXNexperia |
MOSFET N-CH 60V 14A LFPAK33 |