English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 17A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 295mOhm @ 8.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 70 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 2070 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 190W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXFK98N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 98A TO264AA |
|
BSZ097N04LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 12A/40A 8TSDSON |
|
SI4423DY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 10A 8SO |
|
UPA652TT-E1-ARochester Electronics |
MOSFET P-CH 20V 2A 6WSOF |
|
IPW60R165CPRochester Electronics |
21A, 600V, 0.165OHM, N-CHANNEL M |
|
BSS84,215Nexperia |
MOSFET P-CH 50V 130MA TO236AB |
|
FDS8813NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18.5A 8SOIC |
|
SIHG44N65EF-GE3Vishay / Siliconix |
MOSFET N-CH 650V 46A TO247AC |
|
IXFH10N80PWickmann / Littelfuse |
MOSFET N-CH 800V 10A TO247AD |
|
TK5A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 5A TO220SIS |
|
FDB075N15ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 130A D2PAK |
|
TK750A60F,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 10A TO220SIS |
|
STL140N4F7AGSTMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT |
