类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 55 V |
电流 - 连续漏极 (id) @ 25°c: | 47.4A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 18mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 4V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 21.9 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1263 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 85W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | LFPAK56, Power-SO8 |
包/箱: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PMZ350UPEYLNexperia |
MOSFET P-CH 20V 1A DFN1006-3 |
|
DMP2123L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 3A SOT23-3 |
|
TPH3206LSBTransphorm |
GANFET N-CH 650V 16A PQFN |
|
STW75NF30AGSTMicroelectronics |
MOSFET N-CH 300V 60A TO247 |
|
FQAF7N90Rochester Electronics |
MOSFET N-CH 900V 5.2A TO3PF |
|
NTB190N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 20A D2PAK-3 |
|
BUK78150-55A/CUXNexperia |
MOSFET N-CH 55V 5.5A SOT223 |
|
IPB100N04S204ATMA1Rochester Electronics |
MOSFET N-CH 40V 100A TO263-3-2 |
|
STF45N65M5STMicroelectronics |
MOSFET N-CH 650V 35A TO220FP |
|
SPP02N80C3XKSA1Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
PSMN4R0-30YLDXNexperia |
MOSFET N-CH 30V 95A LFPAK56 |
|
STF28N60M2STMicroelectronics |
MOSFET N-CH 600V 24A TO220FP |
|
AO4411Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 8A 8SOIC |