English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SuperFET® III |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 25mOhm @ 37.5A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 3mA |
| 栅极电荷 (qg) (max) @ vgs: | 236 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 7330 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 595W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STP150N3LLH6STMicroelectronics |
MOSFET N-CH 30V 80A TO220AB |
|
BS170FTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 0.15MA SOT23-3 |
|
NTD110N02RGRochester Electronics |
MOSFET N-CH 24V 12.5A/110A DPAK |
|
NTMFS4C03NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 30A/136A 5DFN |
|
FQD5N60CTMRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
FDS8670Rochester Electronics |
MOSFET N-CH 30V 21A 8SOIC |
|
RM20N650HDRectron USA |
MOSFET N-CH 650V 20A TO263-2 |
|
FDZ191PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3A 6WLCSP |
|
FDMS8622Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 4.8A/16.5A 8QFN |
|
BSS7728NH6327XTSA2IR (Infineon Technologies) |
MOSFET N-CH 60V 200MA SOT23-3 |
|
HUF76407D3STRochester Electronics |
N-CHANNEL LOGIC LEVEL ULTRAFET P |
|
DMN3020UFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 15A 6UDFN |
|
FDPF12N60NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 12A TO220F |
