MOSFET N-CH 60V 195A D2PAK
1-1/2" LARK BRUSH; POLY; PLAS HD
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 195A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 2.5mOhm @ 170A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 300 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 8970 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 375W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDZ375PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.7A 4WLCSP |
|
NTDV20N06T4GRochester Electronics |
MOSFET N-CH 60V 20A DPAK |
|
STW56N60M2STMicroelectronics |
MOSFET N-CH 600V 52A TO247 |
|
IRFR9024TRLPBFVishay / Siliconix |
MOSFET P-CH 60V 8.8A DPAK |
|
IRFBC40PBF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 6.2A TO220AB |
|
IXTR102N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 54A ISOPLUS247 |
|
SQ2364EES-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 2A SOT23-3 |
|
IMZ120R030M1HXKSA1IR (Infineon Technologies) |
SICFET N-CH 1.2KV 56A TO247-4 |
|
DMTH3004LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 21A/75A TO252 |
|
SQJ886EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
STN1NK60ZSTMicroelectronics |
MOSFET N-CH 600V 300MA SOT223 |
|
MIC94030YM4Rochester Electronics |
TINYFET P-CHANNEL MOSFET |
|
2N7002K-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 300MA TO236 |