English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 17mOhm @ 9A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 23 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2000 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CSD17585F5Texas Instruments |
MOSFET N-CH 30V 5.9A 3PICOSTAR |
|
NTMFS6H801NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 23A/157A 5DFN |
|
RJK0393DPA-00#J5ARenesas Electronics America |
MOSFET N-CH 30V 40A 8WPAK |
|
APT6013B2LLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 43A T-MAX |
|
SI4459ADY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 29A 8SO |
|
IXTQ86N20TWickmann / Littelfuse |
MOSFET N-CH 200V 86A TO3P |
|
IRFF221Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT20M22LVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 100A TO264 |
|
IPU50R3K0CEAKMA1Rochester Electronics |
MOSFET N-CH 500V 1.7A TO251-3 |
|
STD18NF25STMicroelectronics |
MOSFET N-CH 250V 17A DPAK |
|
FQT7N10TFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 1.7A SOT223-4 |
|
IPP100N08S207AKSA1Rochester Electronics |
MOSFET N-CH 75V 100A TO220-3-1 |
|
SPP11N65C3XKRochester Electronics |
SPP11N65 - 650V AND 700V COOLMOS |
