







FUSE BOARD MNT 200MA 250VAC RAD
MOSFET N-CH 1000V 2A TO252
ELVH 0.5 INH2O DIFF RR LID DIP C
IC REG LINEAR 2.8V/2.8V 8TDFN
| 类型 | 描述 |
|---|---|
| 系列: | Polar™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 7.5Ohm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 24.3 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 655 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 86W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252, (D-Pak) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
RSC002P03T316ROHM Semiconductor |
MOSFET P-CH 30V 250MA SST3 |
|
|
PSMN1R6-30PL,127Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
|
PSMN2R6-60PSQ127Rochester Electronics |
MOSFET N-CH 60V 150A TO220AB |
|
|
SIRA90ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 71A/334A PPAK |
|
|
TJ60S04M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 60A DPAK |
|
|
AOT4N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO220 |
|
|
CEDM8004 BK PBFREECentral Semiconductor |
MOSFET P-CH 30V 450MA SOT883 |
|
|
IPD50P03P4L11ATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 50A TO252-3 |
|
|
FQN1N50CBURochester Electronics |
MOSFET N-CH 500V 380MA TO92-3 |
|
|
APT11N80BC3GRoving Networks / Microchip Technology |
MOSFET N-CH 800V 11A TO247 |
|
|
IRLI520GPBFVishay / Siliconix |
MOSFET N-CH 100V 7.2A TO220-3 |
|
|
IPP60R190E6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20.2A TO220-3 |
|
|
DMN3024SFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 7.5A PWRDI3333-8 |