类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
RUL035N02TRROHM Semiconductor |
MOSFET N-CH 20V 3.5A TUMT6 |
![]() |
SIR164DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8 |
![]() |
FDN86265PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 800MA SUPERSOT3 |
![]() |
IPB60R099C7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 22A TO263-3 |
![]() |
IPU50R2K0CEAKMA1Rochester Electronics |
MOSFET N-CH 500V 2.4A TO251-3 |
![]() |
DMTH6005LK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 90A TO252-4L |
![]() |
SI1442DH-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 4A SC70-6 |
![]() |
BS870-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 250MA SOT23-3 |
![]() |
STD100N10F7STMicroelectronics |
MOSFET N CH 100V 80A DPAK |
![]() |
NVTFS5C658NLWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 109A 8WDFN |
![]() |
SI7852DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 7.6A PPAK SO-8 |
![]() |
CSD17579Q5ATTexas Instruments |
MOSFET N-CH 30V 25A 8VSON |
![]() |
IRFR4620PBFRochester Electronics |
PFET, 24A I(D), 200V, 0.078OHM, |