类型 | 描述 |
---|---|
系列: | HiPerFET™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 250 V |
电流 - 连续漏极 (id) @ 25°c: | 170A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 7.4mOhm @ 85A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 4mA |
栅极电荷 (qg) (max) @ vgs: | 190 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 13500 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 960W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247 (IXFH) |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQP22N30Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 300V 21A TO220-3 |
|
FDD86110Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12.5A/50A DPAK |
|
NVMFS5C682NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8.8A/25A 5DFN |
|
SISS42LDN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 11.3A/39A PPAK |
|
STW57N65M5STMicroelectronics |
MOSFET N-CH 650V 42A TO247 |
|
RM120N40T2Rectron USA |
MOSFET N-CH 40V 120A TO220-3 |
|
MSC130SM120JCU3Roving Networks / Microchip Technology |
TRANS SJT N-CH 1.2KV 173A SOT227 |
|
RM130N100T2Rectron USA |
MOSFET N-CH 100V 130A TO220-3 |
|
IRFS4115PBFRochester Electronics |
HEXFET POWER MOSFET |
|
FQP3N90Rochester Electronics |
MOSFET N-CH 900V 3.6A TO220-3 |
|
SI4483ADY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 19.2A 8SO |
|
RSJ250P10TLROHM Semiconductor |
MOSFET P-CH 100V 25A LPTS |
|
IXFT320N10T2Wickmann / Littelfuse |
MOSFET N-CH 100V 320A TO268 |