类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 9.5A (Ta) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 14.5mOhm @ 5A, 4.5V |
vgs(th) (最大值) @ id: | 1.3V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 25 nC @ 4.5 V |
vgs (最大值): | ±10V |
输入电容 (ciss) (max) @ vds: | 2300 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 1.6W (Ta) |
工作温度: | 150°C |
安装类型: | Surface Mount |
供应商设备包: | SOT-28FL/ECH8 |
包/箱: | 8-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTD24N06T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 24A DPAK |
|
IPD75N04S406ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 75A TO252-3 |
|
SI1401EDH-T1-BE3Vishay / Siliconix |
MOSFET P-CH 12V 4A/4A SC70-6 |
|
IRF8707PBFRochester Electronics |
MOSFET N-CH 30V 11A 8SO |
|
FCP130N60Rochester Electronics |
MOSFET N-CH 600V 28A TO220-3 |
|
2SJ661-DL-1EXRochester Electronics |
MOSFET P-CH D2PAK |
|
STP33N60DM6STMicroelectronics |
MOSFET N-CH 600V 25A TO220 |
|
FDY100PZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 350MA SC89-3 |
|
STP141NF55STMicroelectronics |
MOSFET N-CH 55V 80A TO220AB |
|
STP15N80K5STMicroelectronics |
MOSFET N-CH 800V 14A TO220 |
|
UF3SC065030B7SUnitedSiC |
650V/30MOHM, SIC, STACKED FAST C |
|
HUF76107D3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFR310TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 400V 1.7A DPAK |