类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AUIRFP4409Rochester Electronics |
MOSFET N-CH 300V 38A TO247AC |
|
ZDX080N50ROHM Semiconductor |
MOSFET N-CH 500V 8A TO220FM |
|
SPU07N60C3BKMA1Rochester Electronics |
MOSFET N-CH 650V 7.3A TO251-3 |
|
AON7430Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 13A/34A 8DFN |
|
BSC109N10NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 63A TDSON-8-1 |
|
RQ6E045TNTRROHM Semiconductor |
MOSFET N-CH 30V 4.5A TSMT6 |
|
APT5016BFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 30A TO247 |
|
G30N04D3 |
MOSFET N-CH 40V 30A DFN33-8L |
|
APT25M100JRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 25A ISOTOP |
|
AON6230Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 57.5A/85A 8DFN |
|
HUFA76609D3ST_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
MTM982400BBFPanasonic |
MOSFET N-CH 40V 7A SO8-F1-B |
|
BSC0503NSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 22A/88A TDSON |