English
简体中文
MOSFET P-CH 30V 16A PPAK1212-8
CONN FAKRA JACK STR 50 OHM CRIMP
CONN TERM BLK END PLATE RAIL BLU
LX6 P RS2SM (20 KM) SCF
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 16A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 18mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 65 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 1960 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.7W (Ta), 52W (Tc) |
| 工作温度: | -50°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® 1212-8 |
| 包/箱: | PowerPAK® 1212-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIB422EDK-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 9A PPAK SC75-6 |
|
FQP10N60CRochester Electronics |
MOSFET N-CH 600V 9.5A TO220-3 |
|
NTMFS4C35NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12.4A 5DFN |
|
IPA50R250CPRochester Electronics |
IPA50R250 - 500V COOLMOS N-CHANN |
|
FDB44N25TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 44A D2PAK |
|
IPD90N04S3-04Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
PHD38N02LT,118Nexperia |
MOSFET N-CH 20V 44.7A DPAK |
|
IRFU120ATURochester Electronics |
MOSFET N-CH 100V 8.4A IPAK |
|
STB180N55F3STMicroelectronics |
MOSFET N-CH 55V 120A D2PAK |
|
PSMN5R6-60YLXNexperia |
MOSFET N-CH 60V 100A LFPAK56 |
|
RM12N100S8Rectron USA |
MOSFET N-CHANNEL 100V 12A 8SOP |
|
SVD2955T4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 12A DPAK |
|
VN2222LL-G-P003Roving Networks / Microchip Technology |
MOSFET N-CH 60V 230MA TO92-3 |