English
简体中文
MOSFET N-CH 40V 18.6A 8SOIC
REF 0.25MMX10 M4 FIBER 2M& 10MM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 18.6A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4.5mOhm @ 18.6A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 144 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 7535 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SOIC |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NP100P06PDG-E1-AYRenesas Electronics America |
MOSFET P-CH 60V 100A TO263 |
|
IPB060N15N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 136A TO263-7 |
|
QS6U24TRROHM Semiconductor |
MOSFET P-CH 30V 1A TSMT6 |
|
IPD60R950C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 4.4A TO252-3 |
|
NP100P04PLG-E1-AYRenesas Electronics America |
MOSFET P-CH 40V 100A TO263 |
|
SI4196DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 8A 8SO |
|
AUIRLS3036-7PIR (Infineon Technologies) |
MOSFET N-CH 60V 240A D2PAK |
|
IRFR48ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 42A DPAK |
|
STN3N45K3STMicroelectronics |
MOSFET N-CH 450V 600MA SOT223 |
|
IPN70R600P7SATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 8.5A SOT223 |
|
SCTWA35N65G2VAGSTMicroelectronics |
TRANS SJT N-CH 650V 45A TO247 |
|
IXFH70N30Q3Wickmann / Littelfuse |
MOSFET N-CH 300V 70A TO247AD |
|
BUK9M42-60EXNexperia |
MOSFET N-CH 60V 22A LFPAK33 |