类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 12 V |
电流 - 连续漏极 (id) @ 25°c: | 9.3A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.2V, 2.5V |
rds on (max) @ id, vgs: | 10mOhm @ 9.7A, 4.5V |
vgs(th) (最大值) @ id: | 800mV @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 50.6 nC @ 8 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 2426 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 680mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SC-59 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI8817DB-T2-E1Vishay / Siliconix |
MOSFET P-CH 20V 4MICROFOOT |
|
IRF7779L2TRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 375A DIRECTFET |
|
TSM033NB04LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 21A/121A 8PDFN |
|
US5U29TRROHM Semiconductor |
MOSFET P-CH 20V 1A TUMT5 |
|
NVMFS5C466NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 16A/52A 5DFN |
|
IPD50N06S2L13ATMA2IR (Infineon Technologies) |
MOSFET N-CH 55V 50A TO252-31 |
|
DMN3026LVTQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 6.6A TSOT26 |
|
SI3499DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 5.3A 6TSOP |
|
IPB027N10N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A D2PAK |
|
2SK4088LS-1ERochester Electronics |
MOSFET N-CH 650V 7.5A TO220F-3FS |
|
RQ6E040XNTCRROHM Semiconductor |
MOSFET N-CH 30V 4A TSMT6 |
|
RM80N100AT2Rectron USA |
MOSFET N-CH 100V 80A TO220-3 |
|
IRF3805STRL-7PPIR (Infineon Technologies) |
MOSFET N-CH 55V 160A D2PAK |