类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 50A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 7.5mOhm @ 50A, 10V |
vgs(th) (最大值) @ id: | 4V @ 40µA |
栅极电荷 (qg) (max) @ vgs: | 35 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2.35 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 68W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TO252-3 |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDMS86104Rochester Electronics |
N-CHANNEL SHIELDED GATE POWERTRE |
|
RSD160P05TLROHM Semiconductor |
MOSFET P-CH 45V 16A CPT3 |
|
AOB1404LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 15A/220A TO263 |
|
IPW50R190CEFKSA1Rochester Electronics |
MOSFET N-CH 500V 18.5A TO247-3 |
|
TK12A60D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 12A TO220SIS |
|
IRFL4315TRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 2.6A SOT223 |
|
SIR862DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 50A PPAK SO-8 |
|
STW13N60M2STMicroelectronics |
MOSFET N-CH 600V 11A TO247 |
|
DMN2065UW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N CH 20V 2.8A SOT323 |
|
SI3400A-TPMicro Commercial Components (MCC) |
MOSFET N-CH 30V 5.8A SOT23 |
|
2SK3018-TPMicro Commercial Components (MCC) |
MOSFET N-CH 30V 100MA SOT323 |
|
IRFB7537PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 173A TO220AB |
|
ISC019N03L5SATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 28A/100A TDSON |