类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FCH041N60ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 77A TO247-3 |
|
AOTF3N90Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 900V 2.4A TO220-3F |
|
SI4864DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 17A 8SO |
|
FDB86563-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 110A D2PAK |
|
PMPB16EPXNexperia |
MOSFET P-CH 30V 7.5A DFN2020MD-6 |
|
AO4354Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 23A 8SOIC |
|
IRF9640PBFVishay / Siliconix |
MOSFET P-CH 200V 11A TO220AB |
|
SSM6K341NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 6A 6UDFNB |
|
FDB6676Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMFS5C404NLTT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 52A/370A 5DFN |
|
NTD78N03R-35GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTD4854N-35GRochester Electronics |
MOSFET N-CH 25V 15.7A/128A IPAK |
|
STD25NF10LT4STMicroelectronics |
MOSFET N-CH 100V 25A DPAK |