English
简体中文
600V COOLMOS N-CHANNEL
N CHANNEL JFET
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ CE |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10.3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 400mOhm @ 3.8A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 300µA |
| 栅极电荷 (qg) (max) @ vgs: | 32 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 700 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 83W (Tc) |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252-3 |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIRA20DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 25V 81.7A/100A PPAK |
|
RDD050N20TLROHM Semiconductor |
MOSFET N-CH 200V 5A CPT3 |
|
IRLR014TRLVishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
|
IPI04N03LARochester Electronics |
MOSFET N-CH 25V 80A TO262-3 |
|
SQJ463EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 30A PPAK SO-8 |
|
IPI075N15N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 150V 100A TO262-3 |
|
SPB18P06PGRochester Electronics |
SPB18P06 - 20V-250V P-CHANNEL PO |
|
STP57N65M5STMicroelectronics |
MOSFET N-CH 650V 42A TO220 |
|
SPP15N60C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 15A TO220-3 |
|
HUF75623S3STRochester Electronics |
MOSFET N-CH 100V 22A D2PAK |
|
TK5A60W,S4VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 5.4A TO220SIS |
|
CSD25310Q2Texas Instruments |
MOSFET P-CH 20V 20A 6WSON |
|
AO4466Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 10A 8SOIC |