English
简体中文
MOSFET N-CH 20V 6.6A 6DFN
PWR ENT MOD RCPT IEC320-C14 PNL
IC REG LINEAR 1.5V 1A TO252-3
TOUCH SCREEN CAPACITIVE 23"
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.6A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 25mOhm @ 6.6A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 7.1 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 460 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.7W (Ta), 12.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-DFN2020MD (2x2) |
| 包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI8410DB-T2-E1Vishay / Siliconix |
MOSFET N-CH 20V 4MICRO FOOT |
|
IRFB4115PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 104A TO220AB |
|
BSS670S2LH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 55V 540MA SOT23-3 |
|
IRF9392PBFRochester Electronics |
MOSFET P-CH 30V 9.8A 8SO |
|
SI4058DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 10.3A 8SOIC |
|
IPA80R280P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 17A TO220-3F |
|
NTMFS4985NFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 17.5A/65A 5DFN |
|
NTD4805NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12.7A/95A DPAK |
|
STQ1NK80ZR-APSTMicroelectronics |
MOSFET N-CH 800V 300MA TO92-3 |
|
APT40M70LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 400V 57A TO264 |
|
SI2338DS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 6A SOT23 |
|
IXTA76N25T-TRLWickmann / Littelfuse |
MOSFET N-CH 250V 76A TO263 |
|
SCH1430-TL-HRochester Electronics |
MOSFET N-CH 20V 2A 6SCH |