类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 11A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 10mOhm @ 11A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 30 nC @ 4.5 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 1774 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 1.9W (Ta), 12.5W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DFN2020M-6 |
包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NVMFS5C468NLWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 13A/37A 5DFN |
|
PMN27XPE115Rochester Electronics |
SMALL SIGNAL FET |
|
SISHA04DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 30.9A/40A PPAK |
|
FQP12P20Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 11.5A TO220-3 |
|
IPZ65R065C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 33A TO247-4 |
|
FQD1N80TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 1A DPAK |
|
SQJ146ELP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 74A PPAK SO-8 |
|
STI24N60M6STMicroelectronics |
MOSFET N-CH 600V I2PAK |
|
DMN3008SFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V PWRDI3333 |
|
FDS8449-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 7.6A 8SOIC |
|
IRF840SPBFVishay / Siliconix |
MOSFET N-CH 500V 8A D2PAK |
|
PMN30UN115Rochester Electronics |
N-CHANNEL, MOSFET |
|
FQAF19N20Rochester Electronics |
MOSFET N-CH 200V 15A TO3PF |