English
简体中文
RES 7.87K OHM 0.1% 1/8W 0805
MOSFET N-CH 82V 110A TO220-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 82 V |
| 电流 - 连续漏极 (id) @ 25°c: | 110A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 7mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6400 pF @ 40 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 200W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI2323CDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 6A SOT23-3 |
|
IPW65R110CFDFKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 31.2A TO247-3 |
|
IRFR2405TRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 56A DPAK |
|
SQ2361ES-T1_GE3Vishay / Siliconix |
MOSFET P-CH 60V 2.8A SSOT23 |
|
SI7155DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 31A/100A PPAK |
|
SQS405ENW-T1_GE3Vishay / Siliconix |
MOSFET P-CH 12V 16A PPAK1212-8 |
|
IPP076N12N3GRochester Electronics |
IPP076N12 - 12V-300V N-CHANNEL P |
|
SSM3K357R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 650MA SOT23F |
|
FQU5N60CTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 2.8A IPAK |
|
IPP60R099CPAAKSA1Rochester Electronics |
MOSFET N-CH 600V 31A TO220-3 |
|
IXFH20N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 20A TO247AD |
|
PHD101NQ03LT,118Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 7 |
|
IPB80N03S4L-03Rochester Electronics |
IPB80N03 - 20V-40V N-CHANNEL AUT |