类型 | 描述 |
---|---|
系列: | SIPMOS® |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 240 V |
电流 - 连续漏极 (id) @ 25°c: | 350mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.8V, 4.5V |
rds on (max) @ id, vgs: | 6Ohm @ 350mA, 10V |
vgs(th) (最大值) @ id: | 1.4V @ 108µA |
栅极电荷 (qg) (max) @ vgs: | 6.8 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 95 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 1.7W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-SOT223-4 |
包/箱: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDS6298Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13A 8SOIC |
|
PHT6N06T,135Rochester Electronics |
MOSFET N-CH 55V 5.5A SC73 |
|
FDS6162N7Rochester Electronics |
MOSFET N-CH 20V 23A 8SO |
|
BSS84W-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 50V 130MA SOT323 |
|
FDN86501LZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 2.6A SUPERSOT3 |
|
R6018JNJGTLROHM Semiconductor |
MOSFET N-CH 600V 18A LPTS |
|
IXTA160N10TWickmann / Littelfuse |
MOSFET N-CH 100V 160A TO263 |
|
ZXMN2B01FTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 2.1A SOT23-3 |
|
IXTT88N30PWickmann / Littelfuse |
MOSFET N-CH 300V 88A TO268 |
|
FDMC4D9P20X8Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 18A/75A 8PQFN |
|
SI7489DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 100V 28A PPAK SO-8 |
|
IPW80R290C3ARochester Electronics |
N-CHANNEL AUTOMOTIVE MOSFET |
|
NTP18N06LGRochester Electronics |
MOSFET N-CH 60V 15A TO220AB |