English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 21A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V, 10V |
| rds on (max) @ id, vgs: | 55mOhm @ 10.5A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 13 nC @ 5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 630 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 53W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STFI130N10F3STMicroelectronics |
MOSFET N-CH 100V 46A I2PAKFP |
|
STW62NM60NSTMicroelectronics |
MOSFET N-CH 600V 65A TO247 |
|
IPI22N03S4L15AKSA1Rochester Electronics |
MOSFET N-CH 30V 22A TO262-3 |
|
SI7655ADN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 40A PPAK1212-8S |
|
IPW60R099CPRochester Electronics |
MOSFET N-CH 600V 31A TO247-3-1 |
|
NVHL027N65S3FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 75A TO247-3 |
|
TPH3206PDTransphorm |
GANFET N-CH 600V 17A TO220AB |
|
HAT2168H-EL-ERenesas Electronics America |
MOSFET N-CH 30V 30A LFPAK |
|
BUK9E1R6-30E,127Rochester Electronics |
MOSFET N-CH 30V 120A I2PAK |
|
BUK755R4-100E127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDB12N50TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 11.5A D2PAK |
|
RQ5L030SNTLROHM Semiconductor |
MOSFET N-CH 60V 3A TSMT3 |
|
STL4N10F7STMicroelectronics |
MOSFET N-CH 100V 4.5/18A PWRFLAT |
