English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8.5A (Ta), 21A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 27.5mOhm @ 7.5A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 13µA |
| 栅极电荷 (qg) (max) @ vgs: | 5.8 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 330 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.8W (Ta), 24W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 4-LFPAK |
| 包/箱: | SOT-1023, 4-LFPAK |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTTFS4C25NTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 5A/27A 8WDFN |
|
BSC057N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 17A/71A TDSON |
|
FQAF34N25Rochester Electronics |
MOSFET N-CH 250V 21.7A TO3PF |
|
STW70N60M2-4STMicroelectronics |
MOSFET N-CH 600V 68A TO247 |
|
FDPF7N50URochester Electronics |
MOSFET N-CH 500V 5A TO220F |
|
BUK9M3R3-40HXNexperia |
MOSFET N-CH 40V 80A LFPAK33 |
|
STP18NM60NSTMicroelectronics |
MOSFET N-CH 600V 13A TO220AB |
|
2SK1657-T1B-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IXTA102N15TWickmann / Littelfuse |
MOSFET N-CH 150V 102A TO263 |
|
FQP17P10Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 16.5A TO220-3 |
|
IPP120N08S404AKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 120A TO220-3 |
|
DMTH6016LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 10.8 TO252 T&R |
|
APT22F120LRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 23A TO264 |
