English
简体中文
MOSFET N-CH 30V 8.5A 8SO
DIODE ZENER 22V 500MW SOD123F
LED DRIVER, 8-SEGMENT, PDSO16
THERM PAD 55.9MMX16.3MM GRAY
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8.5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 22mOhm @ 4A, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 57 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1200 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RJK0455DPB-00#J5Renesas Electronics America |
MOSFET N-CH 40V 45A LFPAK |
|
NTLGF3501NT1GRochester Electronics |
MOSFET N-CH 20V 2.8A 6DFN |
|
CSD16408Q5CRochester Electronics |
MOSFET N-CH 25V 22A/113A 8VSON |
|
IPB019N08N5ATMA1IR (Infineon Technologies) |
DIFFERENTIATED MOSFETS |
|
DMG6402LVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 6A TSOT26 |
|
RQ5E035ATTCLROHM Semiconductor |
MOSFET P-CH 30V 3.5A TSMT3 |
|
IPB530N15N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 21A D2PAK |
|
ECH8315-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 7.5A 8ECH |
|
FCH47N60Rochester Electronics |
MOSFET N-CH 600V 47A TO247-3 |
|
STD7N52K3STMicroelectronics |
MOSFET N-CH 525V 6A DPAK |
|
STF40NF20STMicroelectronics |
MOSFET N-CH 200V 40A TO220FP |
|
SPP07N60C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.3A TO220-3 |
|
DMN65D8LFB-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 260MA 3DFN |