类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRLU2905PBFRochester Electronics |
MOSFET N-CH 55V 42A I-PAK |
|
HUF75531SK8TRochester Electronics |
MOSFET N-CH 80V 6A 8SOIC |
|
SQ3426EV-T1_GE3Vishay / Siliconix |
MOSFET N-CHANNEL 60V 7A 6TSOP |
|
FQPF9N25CYDTURochester Electronics |
MOSFET N-CH 250V 8.8A TO220F-3 |
|
FDP5680Rochester Electronics |
MOSFET N-CH 60V 40A TO220-3 |
|
RSJ250P10FRATLROHM Semiconductor |
MOSFET P-CH 100V 25A LPTS |
|
RM80N30DNRectron USA |
MOSFET N-CHANNEL 30V 80A 8PPAK |
|
IPB60R099CPAATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 31A TO263-3 |
|
SQJ409EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 60A PPAK SO-8 |
|
PSMN4R3-100ES,127Rochester Electronics |
TRANSISTOR >30MHZ |
|
BMS3004-1ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 75V 68A TO220F-3SG |
|
CSD18502Q5BTTexas Instruments |
MOSFET N-CH 40V 100A 8VSON |
|
IRL7833PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 150A TO220AB |