类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 4.4A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 2Ohm @ 2.5A, 15V |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | 700 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 2W (Ta), 30W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220FI(LS) |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STF10NM50NSTMicroelectronics |
MOSFET N-CH 500V 7A TO220FP |
|
SSM6J503NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A 6UDFNB |
|
BSP135H6906XTSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 120MA SOT223-4 |
|
SSM3J35MFV,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 100MA VESM |
|
DMTH6009SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V PWRDI5060 |
|
IXFT180N20X3HVWickmann / Littelfuse |
MOSFET N-CH 200V 180A TO268HV |
|
IPP16CN10NGRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 5 |
|
AOWF12N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 12A TO262F |
|
NTP011N15MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 9.8/74.3A TO220 |
|
IPA057N08N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 60A TO220-FP |
|
BSS138-TPMicro Commercial Components (MCC) |
MOSFET N-CH 50V 220MA SOT23 |
|
SI7658ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
|
IXFK120N25PWickmann / Littelfuse |
MOSFET N-CH 250V 120A TO264AA |