English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™, PolarP2™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 300 V |
| 电流 - 连续漏极 (id) @ 25°c: | 88A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 40mOhm @ 44A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 180 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6300 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 600W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-264AA (IXFK) |
| 包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFSL7430PBFRochester Electronics |
MOSFET N-CH 40V 195A D2PAK |
|
NTP7D3N15MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 12.1/101A TO220 |
|
FDB24AN06LA0Rochester Electronics |
MOSFET N-CH 60V 7.8A/40A TO263AB |
|
CSD19531Q5ATexas Instruments |
MOSFET N-CH 100V 100A 8VSON |
|
SQ3481EV-T1_GE3Vishay / Siliconix |
MOSFET P-CHANNEL 30V 7.5A 6TSOP |
|
FDD8780Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 35A TO252AA |
|
STD80N6F7STMicroelectronics |
MOSFET N-CH 60V 40A DPAK |
|
IRLS3813PBFRochester Electronics |
MOSFET N-CH 30V 160A D2PAK |
|
BBS3002-DL-1ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 100A D2PAK |
|
IPI45N06S409AKSA1Rochester Electronics |
MOSFET N-CH 60V 45A TO262-3 |
|
NVMFS5C628NLWFT1GRochester Electronics |
POWER MOSFET |
|
IPBE65R050CFD7AATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 45A TO263-7 |
|
FCPF13N60NTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 13A TO220F |
