RES SMD 11.8K OHM 0.5% 1/4W 1206
CAP ALUM 820UF 20% 50V RADIAL
MOSFET N-CH 600V 36A TO220
TOP VIEW / PLCC 4 / 3.6 X 3.1 X
类型 | 描述 |
---|---|
系列: | MDmesh™ DM6 |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 36A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 80mOhm @ 18A, 10V |
vgs(th) (最大值) @ id: | 4.75V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 55 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 2350 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 250W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSC080N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 14A/53A TDSON |
|
SPA07N60C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.3A TO220-FP |
|
SSM3K341R,LXHFToshiba Electronic Devices and Storage Corporation |
AECQ MOSFET NCH 60V 6A SOT23F |
|
SN74CBT16245DGGRochester Electronics |
IC 16-BIT FET BUS SW 48-TSSOP |
|
IPP80P04P4L06AKSA1Rochester Electronics |
PFET, 80A I(D), 40V, 0.0067OHM, |
|
IPA50R299CPXKSA1Rochester Electronics |
MOSFET N-CH 550V 12A TO220-FP |
|
SUD19N20-90-E3Vishay / Siliconix |
MOSFET N-CH 200V 19A TO252 |
|
IRFBC30ASTRLPBFVishay / Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
|
YJL02N10A-F2-0000HF |
N-CH MOSFET 100V 2A SOT-23-3L |
|
IXTF02N450Wickmann / Littelfuse |
MOSFET N-CH 4500V 200MA I4PAC |
|
UF3SC120016K3SUnitedSiC |
SICFET N-CH 1200V 107A TO247-3 |
|
PSMN1R9-40YSDXNexperia |
MOSFET N-CH 40V 200A LFPAK56 |
|
RF4E070GNTRROHM Semiconductor |
MOSFET N-CH 30V 7A HUML2020L8 |