类型 | 描述 |
---|---|
系列: | Linear L2™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 200 V |
电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 45mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 255 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 10500 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 540W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-268 |
包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIS184DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 17.4A/65.3A PPAK |
|
HUF75645S3SRochester Electronics |
MOSFET N-CH 100V 75A D2PAK |
|
FDMS7658ASSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 29A/70A 8PQFN |
|
VP2106N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 60V 250MA TO92-3 |
|
STW36N60M6STMicroelectronics |
MOSFET N-CHANNEL 600V 30A TO247 |
|
IRL520NSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 10A D2PAK |
|
IRF7421D1TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 5.8A 8SO |
|
RJK1001DPN-E0#T2Rochester Electronics |
MOSFET N-CH 100V 80A TO220AB |
|
AUIRLS3034-7TRLRochester Electronics |
MOSFET N-CH 40V 240A D2PAK |
|
IRLZ34SPBFVishay / Siliconix |
MOSFET N-CH 60V 30A TO263 |
|
BUK7107-55AIE,118Rochester Electronics |
MOSFET N-CH 55V 75A SOT426 |
|
RM2305Rectron USA |
MOSFET P-CH 20V 3A/4.1A SOT23 |
|
DMN6013LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 10.3A PWRDI3333 |