类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 9A (Ta), 54A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 11.5V |
rds on (max) @ id, vgs: | 10mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 12 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1.225 pF @ 12 V |
场效应管特征: | - |
功耗(最大值): | 1.28W (Ta), 50W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | I-PAK |
包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDMC86570LET60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 18A/87A POWER33 |
|
IPA50R950CERochester Electronics |
MOSFET N-CH 500V 4.3A TO220-FP |
|
IXTA12N50PWickmann / Littelfuse |
MOSFET N-CH 500V 12A TO263 |
|
RS3L045GNGZETBROHM Semiconductor |
MOSFET N-CH 60V 4.5A 8SOP |
|
R6009ENXROHM Semiconductor |
MOSFET N-CH 600V 9A TO220FM |
|
BSH105,235Nexperia |
MOSFET N-CH 20V 1.05A TO236AB |
|
2N7002KT7GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 380MA SOT23-3 |
|
RM8N650TIRectron USA |
MOSFET N-CHANNEL 650V 8A TO220F |
|
FDP4030LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
HUF75945G3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IMZ120R060M1HXKSA1IR (Infineon Technologies) |
SICFET N-CH 1.2KV 36A TO247-4 |
|
AOD2210Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 200V 3A/18A TO252 |
|
AON6280Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 80V 17A/85A 8DFN |