English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ P6 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.9A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 600mOhm @ 2.4A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 200µA |
| 栅极电荷 (qg) (max) @ vgs: | 12 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 557 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 28W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-FP |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP126N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 58A TO220-3 |
|
SD215DE TO-72 4LLinear Integrated Systems, Inc. |
HIGH SPEED N-CHANNEL LATERAL DMO |
|
IRFP064NPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 110A TO247AC |
|
STD3NK90ZT4STMicroelectronics |
MOSFET N-CH 900V 3A DPAK |
|
IRFR9220TRRPBFVishay / Siliconix |
MOSFET P-CH 200V 3.6A DPAK |
|
FQPF44N08TRochester Electronics |
MOSFET N-CH 80V 25A TO-220F |
|
IPI47N10S33AKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 47A TO262-3 |
|
SISH129DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 14.4A/35A PPAK |
|
RTF025N03TLROHM Semiconductor |
MOSFET N-CH 30V 2.5A TUMT3 |
|
FDB8441Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 28A/120A TO263AB |
|
IXFQ72N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 72A TO3P |
|
QS5U13TRROHM Semiconductor |
MOSFET N-CH 30V 2A TSMT5 |
|
IRFR014PBFVishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
