English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | FRFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 28.4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 160mOhm @ 14.2A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 140 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 5.6 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 310W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-3P |
| 包/箱: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
XP231P0201TR-GTorex Semiconductor Ltd. |
MOSFET P-CH 30V 200MA SOT23 |
|
IRFS350ARochester Electronics |
MOSFET N-CH 400V 11.5A TO3PF |
|
FDMT80080DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 36A/254A 8DUAL |
|
UF3C120080K3SUnitedSiC |
SICFET N-CH 1200V 33A TO247-3 |
|
IXTH2N150LWickmann / Littelfuse |
MOSFET N-CH 1500V 2A TO247 |
|
IRF6711STRPBFRochester Electronics |
MOSFET N-CH 25V 19A/84A DIRECTFT |
|
APT8020LLLGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 38A TO264 |
|
IPD90N06S407ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-31 |
|
IPSA70R2K0CEAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 4A TO251-3 |
|
IPB107N20NAATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 88A D2PAK |
|
FDMC86261PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 2.7A/9A 8MLP |
|
UPA2790GR-E1-ARochester Electronics |
P-CHANNEL POWER MOSFET |
|
FDMC0310ASSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 19A/21A 8MLP |
