English
简体中文
MOSFET N-CH 600V 7A TO220-3F
IC REG LIN 2.85V 150MA DFN1010-4
IC MTR DRV BIPLR 19-28V 20HTSSOP
IC SRAM 8KBIT PARALLEL 52PLCC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.2Ohm @ 3.5A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 28 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1035 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 38.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3F |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ZXMN2F30FHTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 4.1A SOT23-3 |
|
AUIRFS8408Rochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
NMSD200B01-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 200MA SOT363 |
|
2SK2851TZ-ERochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
RSD080P05TLROHM Semiconductor |
MOSFET P-CH 45V 8A CPT3 |
|
CPH6443-TL-HRochester Electronics |
MOSFET N-CH 35V 6A 6CPH |
|
IRL630PBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 9A TO220AB |
|
SSM6K514NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 12A 6UDFNB |
|
PSMN8R5-100XSQRochester Electronics |
MOSFET N-CH 100V 49A TO220F |
|
APL502LGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 58A TO264 |
|
IRF520NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 9.7A TO220AB |
|
CEDM7002AE TR PBFREECentral Semiconductor |
MOSFET N-CH 60V 300MA SOT883L |
|
STW21N90K5STMicroelectronics |
MOSFET N-CH 900V 18.5A TO247-3 |