类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPB180N06S4H1ATMA1Rochester Electronics |
MOSFET N-CH 60V 180A TO263-7 |
|
IPI65R660CFDXKSA1Rochester Electronics |
MOSFET N-CH 650V 6A TO262-3 |
|
BSZ22DN20NS3GRochester Electronics |
BSZ22DN20 - 12V-300V N-CHANNEL P |
|
IXFR12N100QWickmann / Littelfuse |
MOSFET N-CH 1000V 10A ISOPLUS247 |
|
STP6N95K5STMicroelectronics |
MOSFET N-CH 950V 9A TO220-3 |
|
IXTQ110N10PWickmann / Littelfuse |
MOSFET N-CH 100V 110A TO3P |
|
BSC091N03MSCGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI7613DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 35A PPAK1212-8 |
|
IRF9640SPBFVishay / Siliconix |
MOSFET P-CH 200V 11A D2PAK |
|
NVMFS5C430NLWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 38A/200A 5DFN |
|
FQD5N30TMRochester Electronics |
MOSFET N-CH 300V 4.4A DPAK |
|
IXFA230N075T2-TRLWickmann / Littelfuse |
MOSFET N-CH 75V 230A TO263 |
|
MTP8N50ERochester Electronics |
N-CHANNEL POWER MOSFET |