MOSFET N-CH 650V 24A 5DFN
TAPE DBL COAT 9/16" DIA 2000/RL
类型 | 描述 |
---|---|
系列: | DTMOSVI |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 24A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 125mOhm @ 12A, 10V |
vgs(th) (最大值) @ id: | 4V @ 1.02mA |
栅极电荷 (qg) (max) @ vgs: | 40 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 2250 pF @ 300 V |
场效应管特征: | - |
功耗(最大值): | 190W (Tc) |
工作温度: | 150°C |
安装类型: | Surface Mount |
供应商设备包: | 5-DFN (8x8) |
包/箱: | 4-VSFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
APT30M36JLLRoving Networks / Microchip Technology |
MOSFET N-CH 300V 76A ISOTOP |
|
NVTFS5124PLWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 2.4A 8WDFN |
|
FDMS86103LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A/49A 8PQFN |
|
APT18F60BRoving Networks / Microchip Technology |
MOSFET N-CH 600V 19A TO247 |
|
SIHP8N50D-GE3Vishay / Siliconix |
MOSFET N-CH 500V 8.7A TO220AB |
|
STB35NF10T4STMicroelectronics |
MOSFET N-CH 100V 40A D2PAK |
|
HUF75545P3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 75A TO220-3 |
|
BUK9Y8R7-60E,115Nexperia |
MOSFET N-CH 60V 86A LFPAK56 |
|
BS170PZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 270MA TO92-3 |
|
AO3401Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 4A SOT23-3 |
|
BF2030-E6327Rochester Electronics |
RF N-CHANNEL MOSFET |
|
IRFP3306PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO247AC |
|
RJK03E3DNS-00#J5Rochester Electronics |
MOSFET N-CH 30V 14A 8HWSON |