类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 70A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 5V, 10V |
rds on (max) @ id, vgs: | 4.1mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 2.1V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 22.5 nC @ 5 V |
vgs (最大值): | ±10V |
输入电容 (ciss) (max) @ vds: | 2467 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 79W (Ta) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | LFPAK33 |
包/箱: | SOT-1210, 8-LFPAK33 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STH12N120K5-2STMicroelectronics |
MOSFET N-CH 1200V 12A H2PAK-2 |
|
SIHFL9110TR-GE3Vishay / Siliconix |
MOSFET P-CH 100V 1.1A SOT223 |
|
PSMN3R5-30YL,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
IRF100P218XKMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 209A TO247AC |
|
SISA34DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK1212-8 |
|
RM8A5P60S8Rectron USA |
MOSFET P-CHANNEL 60V 8.5A 8SOP |
|
BUK7219-55A,118Rochester Electronics |
MOSFET N-CH 55V 55A DPAK |
|
NTMFS5H400NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 46A/330A 5DFN |
|
IRLR3114ZPBFRochester Electronics |
MOSFET N-CH 40V 42A DPAK |
|
IRFH4210DTRPBFRochester Electronics |
HEXFET POWER MOSFET |
|
APT30N60BC6Roving Networks / Microchip Technology |
MOSFET N-CH 600V 30A TO247 |
|
FCPF190N60ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 20.6A TO220F |
|
IPA60R099P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 37.9A TO220-FP |