English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 5V |
| rds on (max) @ id, vgs: | 540mOhm @ 2.6A, 5V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 6.1 nC @ 5 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 250 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 25W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPB025N08N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 120A D2PAK |
|
NVTFS5116PLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 6A 8WDFN |
|
STD10N60M2STMicroelectronics |
MOSFET N-CH 600V 7.5A DPAK |
|
C3M0015065DWolfspeed - a Cree company |
SICFET N-CH 650V 120A TO247-3 |
|
MMBF2201NT1Rochester Electronics |
MOSFET N-CH 20V 300MA SC70-3 |
|
DMT12H065LFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 115V 4.3A 6UDFN |
|
STL210N4LF7AGSTMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT |
|
IRF9540NLPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 23A TO262 |
|
SPD04N50C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 4.5A TO252-3 |
|
RJ1P12BBDTLLROHM Semiconductor |
MOSFET N-CH 100V 120A LPTL |
|
SIHP25N50E-GE3Vishay / Siliconix |
MOSFET N-CH 500V 26A TO220AB |
|
QS5U28TRROHM Semiconductor |
MOSFET P-CH 20V 2A TSMT5 |
|
FQPF5N50CFTURochester Electronics |
MOSFET N-CH 500V 5A TO220F |
