English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 44A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 150mOhm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 4V @ 5mA |
| 栅极电荷 (qg) (max) @ vgs: | 285 nC @ 10 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 17650 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Chassis Mount |
| 供应商设备包: | ISOTOP® |
| 包/箱: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDMS039N08BSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 19.4A/100A 8PQFN |
|
SISA96DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 16A PPAK1212-8 |
|
STL8N10LF3STMicroelectronics |
MOSFET N CH 100V 20A PWRFLT5X6 |
|
IRFIZ44NPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 31A TO220AB FP |
|
5HN01M-TL-ERochester Electronics |
MOSFET N-CH 50V 100MA 3MCP |
|
IPW60R090CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 25A TO247-3 |
|
DMT3006LFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 14.1A 6UDFN |
|
IRF530PBFVishay / Siliconix |
MOSFET N-CH 100V 14A TO220AB |
|
STL3N10F7STMicroelectronics |
MOSFET N-CH 100V 4A POWERFLAT |
|
APT10050B2VFRGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 21A T-MAX |
|
DMG7401SFGQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 9.8A PWRDI3333-8 |
|
STW70N65DM6-4STMicroelectronics |
MOSFET N-CH 650V 68A TO247-4 |
|
IPP034NE7N3GRochester Electronics |
IPP034NE7 - 12V-300V N-CHANNEL P |
