English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.9A (Ta), 8.3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 29.2mOhm @ 5.9A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 29 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1330 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SOIC |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PHD9NQ20T,118Nexperia |
MOSFET N-CH 200V 8.7A DPAK |
|
PSMN2R0-60PSRQNexperia |
MOSFET N-CH 60V 120A TO220AB |
|
SPW20N60C3Rochester Electronics |
SPW20N60 - 600V COOLMOS N-CHANNE |
|
DMTH10H025LK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 51.7A TO252 T&R |
|
IPD90R1K2C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 900V 5.1A TO252-3 |
|
CPC5603CTRWickmann / Littelfuse |
MOSFET N-CH 415V 5MA SOT-223 |
|
NVMFS5C426NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 41A/237A 5DFN |
|
BSS123-GSanyo Semiconductor/ON Semiconductor |
FET 100V 6.0 MOHM SOT23 |
|
RFP40N10LERochester Electronics |
N-CHANNEL POWER MOSFET |
|
STP6N62K3STMicroelectronics |
MOSFET N-CH 620V 5.5A TO220AB |
|
STL9P3LLH6STMicroelectronics |
MOSFET P-CH 30V 9A POWERFLAT |
|
AOT7N65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 7A TO220 |
|
TSM10NC60CF C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 10A ITO220S |
